Semiconductor device and bump formation process

A semiconductor device includes a semiconductor substrate. A pad region is disposed on the semiconductor substrate. A micro bump is disposed on the pad region. The micro bump has a first portion on the pad region and a second portion on the first portion. The first portion and the second portion hav...

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Hauptverfasser: Wu, Kai-Di, Kuo, Chien-Hung, Lii, Mirng-Ji, Wang, Chao-Yi, Wu, Sheng-Yu, Chiu, Chun-Mao, Huang, Hon-Lin, Chen, Ching-Hui, Wang, Zi-Zhong
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creator Wu, Kai-Di
Kuo, Chien-Hung
Lii, Mirng-Ji
Wang, Chao-Yi
Wu, Sheng-Yu
Chiu, Chun-Mao
Huang, Hon-Lin
Chen, Ching-Hui
Wang, Zi-Zhong
description A semiconductor device includes a semiconductor substrate. A pad region is disposed on the semiconductor substrate. A micro bump is disposed on the pad region. The micro bump has a first portion on the pad region and a second portion on the first portion. The first portion and the second portion have different widths. The first portion has a first width and the second portion has a second width. The first width is larger or smaller than the second width. The micro bump includes nickel and gold. The semiconductor device also includes a passivation layer overlying a portion of the pad region.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Semiconductor device and bump formation process
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