Semiconductor device and bump formation process

A semiconductor device includes a semiconductor substrate. A pad region is disposed on the semiconductor substrate. A micro bump is disposed on the pad region. The micro bump has a first portion on the pad region and a second portion on the first portion. The first portion and the second portion hav...

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Bibliographische Detailangaben
Hauptverfasser:	Wu, Kai-Di, Kuo, Chien-Hung, Lii, Mirng-Ji, Wang, Chao-Yi, Wu, Sheng-Yu, Chiu, Chun-Mao, Huang, Hon-Lin, Chen, Ching-Hui, Wang, Zi-Zhong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device includes a semiconductor substrate. A pad region is disposed on the semiconductor substrate. A micro bump is disposed on the pad region. The micro bump has a first portion on the pad region and a second portion on the first portion. The first portion and the second portion have different widths. The first portion has a first width and the second portion has a second width. The first width is larger or smaller than the second width. The micro bump includes nickel and gold. The semiconductor device also includes a passivation layer overlying a portion of the pad region.