Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

Devices with multiple threshold voltages formed on a single wafer using strain in the high-k layer

A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Bajaj, Mohit, Hook, Terence B, Sathiyanarayanan, Rajesh, Ando, Takashi, Pandey, Rajan K
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for adjusting a threshold voltage includes depositing a strained liner on a gate structure to strain a gate dielectric. A threshold voltage of a transistor is adjusted by controlling an amount of strain in the liner to control an amount of work function (WF) modulating species that diffuse into the gate dielectric in a channel region. The liner is removed.