Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers
Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the...
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| creator | Lew, Wen Siang Shum, Danny Pak-Chum Loy, Desmond Jia Jun |
| description | Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide. |
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In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190604&DB=EPODOC&CC=US&NR=10312442B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190604&DB=EPODOC&CC=US&NR=10312442B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Lew, Wen Siang</creatorcontrib><creatorcontrib>Shum, Danny Pak-Chum</creatorcontrib><creatorcontrib>Loy, Desmond Jia Jun</creatorcontrib><title>Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers</title><description>Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjbsOgkAQRWksjPoPYy-JPH5AjcZGC9SarOwAk-yD7CwIf-8WWthZ3ZzknNx5NF6tiQerhCeFoFFbN4HEgSrkDRTF7vIlEEYGwbdWMtTWQS2ejqoQmuZXfJFvQYvGIFOvwY4kEchwH15Cp8SEjpfRrBaKcfXZRbQ-He-Hc4ydLZE7UaFBXz5uyTZL0jxP92n2j_MGScBF0w</recordid><startdate>20190604</startdate><enddate>20190604</enddate><creator>Lew, Wen Siang</creator><creator>Shum, Danny Pak-Chum</creator><creator>Loy, Desmond Jia Jun</creator><scope>EVB</scope></search><sort><creationdate>20190604</creationdate><title>Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers</title><author>Lew, Wen Siang ; Shum, Danny Pak-Chum ; Loy, Desmond Jia Jun</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10312442B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Lew, Wen Siang</creatorcontrib><creatorcontrib>Shum, Danny Pak-Chum</creatorcontrib><creatorcontrib>Loy, Desmond Jia Jun</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Lew, Wen Siang</au><au>Shum, Danny Pak-Chum</au><au>Loy, Desmond Jia Jun</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers</title><date>2019-06-04</date><risdate>2019</risdate><abstract>Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers |
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