Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers

Non-volatile memory devices, RRAM devices and methods for fabricating RRAM devices with magnesium oxide insulator layers

Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lew, Wen Siang, Shum, Danny Pak-Chum, Loy, Desmond Jia Jun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Non-volatile memory (NVM) devices, resistive random access memory (RRAM) devices and methods for fabricating such devices are provided. In an exemplary embodiment, a non-volatile memory (NVM) device includes a first electrode and a second electrode positioned above the first electrode. Further, the NVM device includes a variable resistance material layer positioned between the first electrode and the second electrode. The variable resistance material layer contains magnesium oxide.