Passive local area saturation of electron bombarded gain

Methods and systems to intensify an image, such as in a night vision apparatus, include a semi-conductor structure that includes a first region that is doped to generate a plurality of electrons and corresponding holes for each electron that impinges a reception surface of the semi-conductor structure, a second region that is doped to attract the holes, an electrically conductive region to output the holes from the second region, and a third region that is doped to restrict a flow of the holes from the second region to the electrically conductive region such that some of the holes will combine with some of the plurality of electrons within the first region. The first region further includes an emission area from which to emit remaining ones of the plurality of electrons.