FinFET with reduced series total resistance

FinFET with reduced series total resistance

Selective epitaxial growth is used to form a hetero-structured source/drain region to fill an etched recess in a silicon fin for an n-type FinFET device.

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Bibliographische Detailangaben
Hauptverfasser: Ekbote, Shashank, Roh, Ukjin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Selective epitaxial growth is used to form a hetero-structured source/drain region to fill an etched recess in a silicon fin for an n-type FinFET device.