Process for producing silicon single crystal

In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silic...

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Bibliographische Detailangaben
Hauptverfasser:	Yasumura, Ken, Tachibana, Shoji
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY COMPOUNDS THEREOF CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INORGANIC CHEMISTRY METALLURGY NON-METALLIC ELEMENTS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	In a process for producing a silicon single crystal in which carbon is incorporated in order to inhibit crystal defects, provided is a process which easily allows carbon to be mixed and dissolved into a silicon melt. The process for producing a silicon single crystal, which involves allowing a silicon single crystal to grow during its pulling-up from the silicon melt held in a crucible, uses as at least part of a silicon raw material, crushed materials of a polycrystalline silicon rod produced by Siemens process that are obtained by crushing an end of the rod in the vicinity contacting a carbon core wire holding member.