Interconnects formed by a metal replacement process

Interconnects formed by a metal replacement process

Methods of forming interconnects. An interconnect opening is formed in a dielectric layer. A first conductor layer composed of a first metal is formed in the interconnect opening. A second conductor layer is formed inside the interconnect opening by displacing the first metal of the first conductor...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Zhang, Xunyuan, Ryan, Errol Todd, LiCausi, Nicholas V, Lin, Sean Xuan, Raymond, Mark V
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of forming interconnects. An interconnect opening is formed in a dielectric layer. A first conductor layer composed of a first metal is formed in the interconnect opening. A second conductor layer is formed inside the interconnect opening by displacing the first metal of the first conductor layer and replacing the first metal with a second metal different from the first metal.