Fin diode structure and methods thereof

A method and structure for forming a fin bottom diode includes providing a substrate having a plurality of fins extending therefrom. Each of the plurality of fins includes a substrate portion and an epitaxial layer portion over the substrate portion. A first dopant layer is formed on sidewalls of a...

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Bibliographische Detailangaben

1. Verfasser:	Chou, You-Hua
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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