Fin diode structure and methods thereof
A method and structure for forming a fin bottom diode includes providing a substrate having a plurality of fins extending therefrom. Each of the plurality of fins includes a substrate portion and an epitaxial layer portion over the substrate portion. A first dopant layer is formed on sidewalls of a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method and structure for forming a fin bottom diode includes providing a substrate having a plurality of fins extending therefrom. Each of the plurality of fins includes a substrate portion and an epitaxial layer portion over the substrate portion. A first dopant layer is formed on sidewalls of a first region of the substrate portion of each of the plurality of fins. After forming the first dopant layer, a first annealing process is performed to form a first diode region within the first region of the substrate portion. A second dopant layer is formed on sidewalls of a second region of the substrate portion of each of the plurality of fins. After forming the second dopant layer, a second annealing process is performed to form a second diode region within the second region of the substrate portion of each of the plurality of fins. |
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