Formation of liner and metal conductor

An integrated circuit device includes a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom. A liner which is an alloy of a first metal and a selected element formed at interfa...

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Bibliographische Detailangaben
Hauptverfasser: Yang, Chih-Chao, Edelstein, Daniel C
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An integrated circuit device includes a substrate including a dielectric layer patterned with a set of conductive line trenches, each conductive line trench having parallel vertical sidewalls and a horizontal bottom. A liner which is an alloy of a first metal and a selected element formed at interfaces of the metal layer and a surface of the dielectric and is created by an anneal and reflow process. The first metal having a first conductivity in a pure form. A second metal layer fills the set of conductive line trenches, the second metal having a second conductivity higher than the first conductivity.