Method for high throughput using beam scan size and beam position in gas cluster ion beam processing system

A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, gene...

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Bibliographische Detailangaben
Hauptverfasser:	Joy, Nicholas, Shao, Yan, Leith, Allen J, Russell, Noel, Caliendo, Steven P, Chae, Soo Doo, LaRose, Joshua, Lagana-Gizzo, Vincent, Fernandez, Luis
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CONTROL OR REGULATING SYSTEMS IN GENERAL CONTROLLING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FUNCTIONAL ELEMENTS OF SUCH SYSTEMS MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS ORELEMENTS PHYSICS REGULATING SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A system and method for performing location specific processing of a workpiece is described. The method includes placing a microelectronic workpiece in a beam processing system, selecting a beam scan size for a beam scan pattern that is smaller than a dimension of the microelectronic workpiece, generating a processing beam, and processing a target region of the microelectronic workpiece by irradiating the processing beam along the beam scan pattern onto the target region within the beam scan size selected for processing the microelectronic workpiece.