High aspect ratio etch of oxide metal oxide metal stack

High aspect ratio etch of oxide metal oxide metal stack

A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask i...

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Bibliographische Detailangaben
Hauptverfasser: Lill, Thorsten, Reddy, Sirish K, Eppler, Aaron, Chattopadhyay, Kaushik, Singh, Harmeet, Guha, Joydeep, Vahedi, Vahid, Mountsier, Thomas W
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for etching features in an OMOM stack with first layer of silicon oxide, a second layer of a metal containing material over the first layer, a third layer of silicon oxide over the second layer, and a fourth layer of a metal containing material over the third layer is provided. A hardmask is formed over the stack. The hardmask is patterned. The OMOM stack is etched through the hardmask.