Resist underlayer film-forming composition including a compound having an amino group protected with a tert-butoxycarbonyl group

There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass...

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Bibliographische Detailangaben
Hauptverfasser: Nishita, Tokio, Fujitani, Noriaki, Sakamoto, Rikimaru
Format: Patent
Sprache:eng
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Zusammenfassung:There is provided a composition that a resist pattern having a reduced LWR representing variations in line width of the resist pattern, compared to conventional resist patterns, can be formed. A resist underlayer film-forming composition for lithography comprising a polymer, 0.1 to 30 parts by mass of a compound having an amino group protected with a tert-butoxycarbonyl group and an unprotected carboxyl group, or a hydrate of the compound, relative to 100 parts by mass of the polymer, and a solvent.