Semiconductor devices and methods for forming a semiconductor device

A semiconductor device includes a crack propagation prevention structure. The crack propagation prevention structure is located at an edge region of a wiring layer stack located on a semiconductor substrate of the semiconductor device. Furthermore, the crack propagation prevention structure laterally surrounds at least one wiring structure located within the wiring layer stack. Additionally, the semiconductor device includes an insulation trench extending into the semiconductor substrate. The insulation trench comprises at least an insulation layer electrically insulating the crack propagation prevention structure from the semiconductor substrate. The crack propagation prevention structure extends vertically at least from a surface of the wiring layer stack to the insulation trench.