Method for fabricating semiconductor device

Method for fabricating semiconductor device

A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Yen, Fu-Cheng, Liu, Sheng-Hsu, Kuo, Chun-Liang, Chen, Yi-Wei, Tsai, Chung-Min, Yang, Tsung-Mu, Hsu, Yu-Ming, Wang, Tsang-Hsuan
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for forming an epitaxial layer on a substrate is disclosed. The method includes the steps of: providing a substrate into a chamber; injecting a precursor and a carrier gas to form the epitaxial layer on the substrate at a starting pressure; and pumping down the starting pressure to a second pressure according to a gradient during a cool down process in the chamber.