Nanostructured LED

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of eac...

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Bibliographische Detailangaben
Hauptverfasser:	Ohlsson, Jonas, Hanberg, Peter Jesper, Konsek, Steven, Martynov, Yourii
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEATING INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21Sand F21V, RELATING TO THEFORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THELIGHT EMITTED LIGHTING MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES MECHANICAL ENGINEERING NANOTECHNOLOGY NON-PORTABLE LIGHTING DEVICES PERFORMING OPERATIONS SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SYSTEMS THEREOF TRANSPORTING VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLEEXTERIORS WEAPONS
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Beschreibung
Zusammenfassung:	The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.