Semiconductor device and method of manufacture

A method of manufacturing a semiconductor device comprises forming a spacer material on the semiconductor fin and the gate stack, wherein the forming the spacer material further comprises using atomic layer deposition to deposit a first material on the semiconductor fin and using atomic layer deposi...

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Bibliographische Detailangaben
Hauptverfasser:	Huang, Tai-Chun, Lu, Bo-Cyuan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	A method of manufacturing a semiconductor device comprises forming a spacer material on the semiconductor fin and the gate stack, wherein the forming the spacer material further comprises using atomic layer deposition to deposit a first material on the semiconductor fin and using atomic layer deposition to deposit a second material on the first material, wherein the second material is different from the first material. The spacer material is removed from the semiconductor fin, wherein the removing the spacer material further comprises implanting an etching modifier into the spacer material to form a modified spacer material and removing the modified spacer material.