Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas

Method for processing a semiconductor wafer using non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas

A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associa...

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Hauptverfasser: Vallishayee, Rakesh, Lee, Sherry, Liao, Marci, Weiland, Larg, Strojwas, Marcin, Ciplickas, Dennis, Michaels, Kimon, Rovner, Vyacheslav, Strojwas, Andrzej, Hess, Christopher, Matsuhashi, Hideki, Lam, Stephen, Fiscus, Timothy, Cheng, Jeremy, Comensoli, Simone, Brozek, Tomasz, Doong, Kelvin, Taylor, Carl, De, Indranil, Haigh, Jonathan, Kibarian, John, Rauscher, Markus, Yokoyama, Nobuharu, O'Sullivan, Conor, Eisenmann, Hans, Lin, Sheng-Che
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A method for processing a semiconductor wafer uses non-contact electrical measurements indicative of at least one tip-to-tip short or leakage, at least one tip-to-side short or leakage, and at least one side-to-side short or leakage, where such measurements are obtained from non-contact pads associated with respective tip-to-tip short, tip-to-side short, and side-to-side short test areas.