Multilayer mirror

A multilayer mirror for reflecting extreme ultraviolet (EUV) radiation, the mirror has a substrate and a stack of layers formed on the substrate. The stack of layers comprises layers including a low index material and a high index material, the low index material having a lower real part of the refr...

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Bibliographische Detailangaben
Hauptverfasser:	Von Blanckenhagen, Gisela, Goehnermeier, Aksel
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BLASTING CINEMATOGRAPHY ELECTROGRAPHY FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMSTHEREOF GAMMA RAY OR X-RAY MICROSCOPES HEATING HOLOGRAPHY IRRADIATION DEVICES LIGHTING MATERIALS THEREFOR MECHANICAL ENGINEERING NUCLEAR ENGINEERING NUCLEAR PHYSICS OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHERARTICLES, NOT OTHERWISE PROVIDED FOR TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOTOTHERWISE PROVIDED FOR WEAPONS
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Beschreibung
Zusammenfassung:	A multilayer mirror for reflecting extreme ultraviolet (EUV) radiation, the mirror has a substrate and a stack of layers formed on the substrate. The stack of layers comprises layers including a low index material and a high index material, the low index material having a lower real part of the refractive index than the high index material at a given operating wavelength λ. The mirror provides a first peak of reflectivity of 20% or more at a first wavelength λ1 in a first wavelength band extending from 6 nm to 7 nm and a second peak of reflectivity of 20% or more at a second wavelength λ2 in a second wavelength band extending from 12.5 nm to 15 nm.