Semiconductor device having recess filled with conductive material and method of manufacturing the same

A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a conductive material filled in a through via. The thr...

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Bibliographische Detailangaben
1. Verfasser: Huang, Yin-Chieh
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic structure. The second semiconductor chip is bonded with the first semiconductor chip by a conductive material filled in a through via. The through via connects the first metallic structure and the second metallic structure, wherein a portion of the through via is inside the first semiconductor chip and the second semiconductor chip.