Spin transfer torque magnetic random access memory for supporting operational modes with mode register

A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register suppo...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Yun-sang, Kim, Hye-jin, Kang, Sang-beom, Kang, Dong-seok, Park, Chul-woo, Cha, Soo-ho, Kim, Chan-kyung, Sohn, Dong-hyun, Oh, Hyung-rock
Format: Patent
Sprache:eng
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Zusammenfassung:A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.