Wafer placement and gap control optimization through in situ feedback

Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.

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Bibliographische Detailangaben
Hauptverfasser:	Griffin, Kevin, Egan, Todd, Minkovich, Alex, Yudovsky, Joseph, Ravid, Abraham, Khandelwal, Somesh
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVEREDIN A SINGLE OTHER SUBCLASS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MEASURING MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR METALLURGY PERFORMING OPERATIONS PHYSICS SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TARIFF METERING APPARATUS TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.