Semiconductor structure having etch stop layer and method of forming the same

Semiconductor structure having etch stop layer and method of forming the same

A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Lin, Cheng-Han, Weng, Han-Sheng, Chang, Chao-Ching, Lin, Min-Hui, Tsai, Jian-Shin, Lin, Yi-Ming
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure includes a first dielectric layer, a first conductive via, a second conductive via and an etch stop layer. The first conductive via and the second conductive via are respectively disposed in the first dielectric layer. The etch stop layer is disposed on the first dielectric layer and contacts the first and second conductive vias. The etch stop layer includes nitrogen-and-oxygen-doped silicon carbide (NODC).