Method for manufacturing display device including a wiring layer of a molybdenum-based material

There are provided a display device including a highly reliable wiring having excellent adhesion to an insulating film, and a method for manufacturing the same. A molybdenum-niobium layer has good adhesion to an insulating film, and thus, a first wiring having the molybdenum-niobium layer as an uppe...

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Bibliographische Detailangaben
Hauptverfasser:	Kimoto, Hidenobu, Tarui, Tetsuya, Sugimoto, Takehisa, Seguchi, Yoshihiro
Format:	Patent
Sprache:	eng
Schlagworte:	ADVERTISING ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICESUSING STATIC MEANS TO PRESENT VARIABLE INFORMATION BASIC ELECTRIC ELEMENTS CRYPTOGRAPHY DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DISPLAY DISPLAYING EDUCATION ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FREQUENCY-CHANGING LABELS OR NAME-PLATES NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS PHYSICS SEALS SEMICONDUCTOR DEVICES SIGNS TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Beschreibung
Zusammenfassung:	There are provided a display device including a highly reliable wiring having excellent adhesion to an insulating film, and a method for manufacturing the same. A molybdenum-niobium layer has good adhesion to an insulating film, and thus, a first wiring having the molybdenum-niobium layer as an upper layer wiring is tightly adhered to a gate insulating film which is formed on the surface of the upper layer wiring. When there is a need to exchange a semiconductor chip mounted on a connection terminal that is provided at an end portion of a wiring such as a gate lead line or a source lead line formed of the first wiring, an ACF which was used for pressure-bonding of the semiconductor chip remains on the connection terminal even if the semiconductor chip is peeled off. To thoroughly remove the ACF, a force has to be applied to the connection terminal, but because the gate insulating film is tightly adhered to the molybdenum-niobium layer, the gate insulating film protecting the periphery of the connection terminal is not easily peeled off.