Stable work function for narrow-pitch devices

Stable work function for narrow-pitch devices

A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employ...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Bajaj, Mohit, Hook, Terence B, Sathiyanarayanan, Rajesh, Ando, Takashi, Pandey, Rajan K
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A work function setting metal stack includes a configuration of layers including a high dielectric constant layer and a diffusion prevention layer formed on the high dielectric constant layer. An aluminum doped TiC layer has a thickness greater than 5 nm wherein the configuration of layers is employed between two regions as a diffusion barrier to prevent mass diffusion between the two regions.