Vertically stacked inductors and transformers
The present disclosure relates generally to semiconductor structures, and more particularly, to structures and methods for implementing high performance vertically stacked inductors and transformers. The structure includes: a first conductor composed of a redistribution line; a second conductor comp...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present disclosure relates generally to semiconductor structures, and more particularly, to structures and methods for implementing high performance vertically stacked inductors and transformers. The structure includes: a first conductor composed of a redistribution line; a second conductor composed of a back end of line wiring layer, coupled to the redistribution line; and a ferro magnetic material between the first conductor and the second conductor. |
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