Protection of a telephone line against overvoltages

A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyri...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ballon, Christian, Simonnet, Jean-Michel
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.