Semiconductor device

According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a first insulating layer, and a first insulating region. The second semiconductor region is provided on the first semico...

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Bibliographische Detailangaben
Hauptverfasser: Okumura, Hideki, Tsuchitani, Masanobu, Shiraishi, Tatsuya, Misawa, Hiroto, Ezaki, Akira
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:According to an embodiment, a semiconductor device includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a first insulating layer, and a first insulating region. The second semiconductor region is provided on the first semiconductor region. The first insulating layer is provided around at least a portion of the first semiconductor region and at least a portion of the second semiconductor region. The first insulating layer contacts the second semiconductor region. The first insulating region is provided around at least a portion of the first insulating layer.