Surface acoustic wave device

A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, support layers, and a cover layer. A distance from a first end of a first partition-support layer to one of the outer-periphery-frame support layers closest to the first end is smaller than a distance from a second...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	Hirano, Yasuhiko, Sekiya, Daisuke
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS RESONATORS
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Beschreibung
Zusammenfassung:	A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode, support layers, and a cover layer. A distance from a first end of a first partition-support layer to one of the outer-periphery-frame support layers closest to the first end is smaller than a distance from a second end of the first partition-support layer to one of the outer-periphery-frame support layers closest to the second end, and a distance from a first end of a second partition-support layer to one of the outer-periphery-frame support layers closest to the first end is larger than a distance from a second end of the second partition-support layer to one of the outer-periphery-frame support layers closest to the second end.