Transistor devices, memory cells, and arrays of memory cells
A transistor device includes a pair of source/drain regions having a channel region there-between. A first gate is proximate the channel region. A gate dielectric is between the first gate and the channel region. A second gate is proximate the channel region. A programmable material is between the s...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A transistor device includes a pair of source/drain regions having a channel region there-between. A first gate is proximate the channel region. A gate dielectric is between the first gate and the channel region. A second gate is proximate the channel region. A programmable material is between the second gate and the channel region. The programmable material includes at least one of a) a multivalent metal oxide portion and an oxygen-containing dielectric portion, or b) a multivalent metal nitride portion and a nitrogen-containing dielectric portion. Memory cells and arrays of memory cells are disclosed. |
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