Heterojunction bipolar transistor

A high-performance HBT that is unlikely to decrease the process controllability and to increase the manufacturing cost is implemented. A heterojunction bipolar transistor includes an emitter layer, a base layer, and a collector layer on a GaAs substrate. The emitter layer is formed of InGaP. The bas...

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Bibliographische Detailangaben
Hauptverfasser:	Obu, Isao, Yoshida, Shigeru
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A high-performance HBT that is unlikely to decrease the process controllability and to increase the manufacturing cost is implemented. A heterojunction bipolar transistor includes an emitter layer, a base layer, and a collector layer on a GaAs substrate. The emitter layer is formed of InGaP. The base layer is formed of GaAsPBi having a composition that substantially lattice-matches GaAs.