Semiconductor memory device
A semiconductor memory device includes a memory plane including a plurality of electrode layers stacked on a substrate and a semiconductor layer extending through the plurality of electrode layers in a stacking direction thereof, a circuit provided on the substrate around the memory plane, a first i...
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| Zusammenfassung: | A semiconductor memory device includes a memory plane including a plurality of electrode layers stacked on a substrate and a semiconductor layer extending through the plurality of electrode layers in a stacking direction thereof, a circuit provided on the substrate around the memory plane, a first insulating layer including a first portion and a second portion between the substrate and a second insulating layer, and the second insulating layer covering the circuit. The first portion is provided along an outer edge of the memory plane, and the second portion is spaced from the first portion and is provided on the circuit side. The second insulating layer includes a part in contact with the substrate between the first portion and the second portion, and the second insulating layer blocks a diffusion of hydrogen radicals with a higher rate than the first insulating layer. |
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