Semiconductor light-emitting devices and methods of manufacturing the same

A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure,...

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Bibliographische Detailangaben
Hauptverfasser: Park, Jung-kyu, Yang, Seong-seok, Kwak, Jung-hee, Lee, Jin-bock, Kim, Jung-sung
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor light-emitting device may include an emission structure, a protection pattern layer on a limited region of the emission structure, and an insulating pattern layer on the emission structure. The protection pattern layer may expose a separate remaining region of the emission structure, and the first insulating pattern layer may cover at least the remaining region of the emission structure. The insulating layer may include an opening that exposes at least a portion of a surface of the protection pattern layer, such that the emission structure remains covered by at least one of the insulating layer and the protection pattern layer.