Device with multiple, stacked light emitting devices

A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the...

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Bibliographische Detailangaben
Hauptverfasser: Schricker, April Dawn, Bechtel, Hans-Helmut, Nelson, Erik
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A device according to embodiments of the invention includes a first semiconductor light emitting layer disposed between a first n-type region and a first p-type region. A second semiconductor light emitting layer disposed between a second n-type region and a second p-type region is disposed over the first semiconductor light emitting layer. A non-III-nitride material separates the first and second light emitting layers.