Method for manufacturing wafer-level semiconductor packages

During the manufacture of a semiconductor package, a semiconductor wafer including a plurality of bond pads on a surface of the wafer is provided and the surface of the wafer is covered with a dielectric material to form a dielectric layer over the bond pads. Portions of the dielectric layer corresponding to positions of the bond pads are removed to form a plurality of wells, wherein each well is configured to form a through-hole between top and bottom surfaces of the dielectric layer for exposing each bond pad. A conductive material is then deposited into the wells to form a conductive layer between the bond pads and a top surface of the dielectric layer. Thereafter, the semiconductor wafer is singulated to form a plurality of semiconductor packages.