Minimization of ring erosion during plasma processes

Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing ch...

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Bibliographische Detailangaben
Hauptverfasser:	Joubert, Olivier, Achutharaman, Vedapuram S, Luere, Olivier
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DECORATIVE ARTS DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GLASS INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL JOINING GLASS TO GLASS OR OTHER MATERIALS METALLURGY MINERAL OR SLAG WOOL MOSAICS MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE PAPERHANGING PERFORMING OPERATIONS PRODUCING DECORATIVE EFFECTS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS SURFACE TREATMENT OF GLASS SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TARSIA WORK TRANSPORTING
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Beschreibung
Zusammenfassung:	Methods are disclosed for etching a substrate. The method includes preferentially coating cover ring relative other chamber components in the processing chamber, while under vacuum, and while a substrate is not present in the processing chamber. The substrate is subsequently etched the processing chamber. After etching, the interior of the processing chamber is cleaned after the substrate has been removed.