Method and apparatus for stressing a non-volatile memory

Method and apparatus for stressing a non-volatile memory

A method and memory for stressing a plurality of non-volatile memory cells is provided. The method includes entering a memory cell stressing mode and providing one or more erase stress pulses to the plurality of non-volatile memory cells; determining that a threshold voltage of at least a subset of...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Yanzhuo, Mu, Fuchen, Schmid, Benjamin A, Eguchi, Richard K, Swift, Craig T, He, Chen
Format: Patent
Sprache:eng
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Zusammenfassung:A method and memory for stressing a plurality of non-volatile memory cells is provided. The method includes entering a memory cell stressing mode and providing one or more erase stress pulses to the plurality of non-volatile memory cells; determining that a threshold voltage of at least a subset of the plurality of non-volatile memory cells has a first relationship that is either greater than or less than a first predetermined voltage; providing one or more program stress pulses to the plurality of memory cells; and determining that the threshold voltage of at least a subset of the plurality of memory cells has a second relationship to a second predetermined voltage that is different than the first relationship.