Multigate transistor

A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first material to form an opening in the first material. An epitaxially grown semiconductor material is grown from a seed layer into the opening....

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Reber, Douglas Michael, Shroff, Mehul D
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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