Multigate transistor
A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first material to form an opening in the first material. An epitaxially grown semiconductor material is grown from a seed layer into the opening....
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| Sprache: | eng |
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| Zusammenfassung: | A multigate transistor is formed on a wafer with a first material and a second material. Portions of the second material are selectively removed from the first material to form an opening in the first material. An epitaxially grown semiconductor material is grown from a seed layer into the opening. A portion of the first material is removed around the epitaxially grown semiconductor material in the opening and a gate material is formed in locations of the removed first material. The epitaxially grown semiconductor material in the opening serves as a channel region for a multigate transistor and the gate material serves as a gate for the multigate transistor. |
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