Semiconductor device and method of manufacturing the same

In one embodiment, a method of manufacturing a semiconductor device includes forming a plug in a first insulator, forming a first film on the first insulator and the plug, and forming an opening in the first film. The method further includes forming a second insulator in the opening to form an air g...

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Bibliographische Detailangaben
1. Verfasser: Fukumaki, Naomi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In one embodiment, a method of manufacturing a semiconductor device includes forming a plug in a first insulator, forming a first film on the first insulator and the plug, and forming an opening in the first film. The method further includes forming a second insulator in the opening to form an air gap in the opening, removing the first film after forming the second insulator, to expose the plug, and forming an interconnect on the exposed plug.