EUV lithography system and operating method

An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-cont...

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Bibliographische Detailangaben
Hauptverfasser:	Schmidt, Stefan-Wolfgang, Te Sligte, Edwin, Ehm, Dirk Heinrich, Osorio, Edgar, Logtenberg, Hella, Zellenrath, Mark
Format:	Patent
Sprache:	eng
Schlagworte:	ACCESSORIES THEREFOR APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USINGWAVES OTHER THAN OPTICAL WAVES APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FORPROJECTING OR VIEWING THEM APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	An EUV lithography system (1) includes: at least one optical element (13, 14) having an optical surface (13a, 14a) arranged in a vacuum environment (17) of the EUV lithography system (1), and a feed device (27) for feeding hydrogen into the vacuum environment (17), in which at least one silicon-containing surface (29a) is arranged. The feed device (27) additionally feeds an oxygen-containing gas into the vacuum environment (17) and has a metering device (28) that sets an oxygen partial pressure (pO2) at the at least one silicon-containing surface (29a) and/or at the optical surface (13a, 14a).