Methods for forming semiconductor device structures

The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. A structure includes a relaxed substrate including a bulk material, a strained layer directly on the relaxed substrate, where a strain of the strained layer is not induced b...

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Bibliographische Detailangaben
Hauptverfasser: Hammond, Richard, Lochtefeld, Anthony J, Currie, Matthew T, Langdo, Thomas A, Fitzgerald, Eugene A
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication. A structure includes a relaxed substrate including a bulk material, a strained layer directly on the relaxed substrate, where a strain of the strained layer is not induced by the relaxed substrate, and a transistor formed on the strained layer.