Patterning magnetic films using self-stop electro-etching

A semiconductor structure includes a substrate and a patterned magnetic feature disposed over a top surface of the substrate. The patterned magnetic feature is a magnetic material, and has undercut sidewalls providing a self-stop for electro-etching of the magnetic material. The semiconductor struct...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Naigang, Rath, David L, O'Sullivan, Eugene J
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor structure includes a substrate and a patterned magnetic feature disposed over a top surface of the substrate. The patterned magnetic feature is a magnetic material, and has undercut sidewalls providing a self-stop for electro-etching of the magnetic material. The semiconductor structure may form a closed-yoke inductor or a solenoid inductor.