Reflection mask and pattern formation method

According to one embodiment, there is provided a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays. The reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arr...

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Bibliographische Detailangaben
Hauptverfasser:	Suzuki, Masaru, Mizuno, Hiroyuki, Yoshimochi, Kazuyuki
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	According to one embodiment, there is provided a reflection mask including a multilayer reflection film configured to reflect EUV light or soft X-rays. The reflection mask includes a periodic pattern arrangement region in which first patterns are periodically arranged, and a non-periodic pattern arrangement region in which second patterns are non-periodically arranged. The non-periodic pattern arrangement region and the periodic pattern arrangement region differ from one another in reflectivity for the EUV light or the soft X-rays.