Semiconductor device structure and method
A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the fi...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the first semiconductor layer, the first insulator layer, and the second semiconductor layer, and a second transistor comprises the second semiconductor layer, the second insulator layer, and the third semiconductor layer. |
---|