Semiconductor device structure and method

A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the fi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Hong, Minghwei, Liu, Fan-Hung, Liang, Chi-Te
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A multi-layered semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor layer, a first insulator layer, a second semiconductor layer, a second insulator layer, and a third semiconductor layer are formed over a substrate. A first transistor comprises the first semiconductor layer, the first insulator layer, and the second semiconductor layer, and a second transistor comprises the second semiconductor layer, the second insulator layer, and the third semiconductor layer.