Electronic devices with tunable electrostatic discharge protection and methods for producing the same

Electronic devices and methods of producing such electronic devices are provided. In an exemplary embodiment, a method of producing an electronic device includes forming a protected circuit and an ESD circuit, where the ESD circuit is configured to discharge an electrostatic discharge (ESD) to a ground such that the ESD bypasses the protected circuit. An ESD transistor is formed in the ESD circuit, where the ESD transistor includes a source and a drain. The ESD transistor also includes a gate with a gate width perpendicular to a gate length, where the gate length is measured across the gate from the source to the drain. A trigger voltage of the ESD transistor is set by adjusting the gate width.