Semiconductor devices with alignment keys
A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that pe...
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creator | Shin, Sooho Seo, Bumseok Yoon, Chan-Sic Kim, Kwangmin Moon, Ilyoung Lee, Hoin Lee, Kiseok Lee, Jun Ho Lee, Juik Park, Jemin |
description | A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that penetrates at least a portion of the first sub-alignment key pattern, and a lower conductive pattern in the alignment key trench. The alignment key trench includes an upper trench that is provided in the capping dielectric pattern that has a first width, and a lower trench that extends downward from the upper trench and that has a second width less than the first width. The lower conductive pattern includes sidewall conductive patterns that are separately disposed on opposite sidewalls of the lower trench. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US10026694B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US10026694B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US10026694B23</originalsourceid><addsrcrecordid>eNrjZNAMTs3NTM7PSylNLskvUkhJLctMTi1WKM8syVBIzMlMz8tNzStRyE6tLOZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYYGBkZmZpYmTkbGxKgBADC6KTU</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor devices with alignment keys</title><source>esp@cenet</source><creator>Shin, Sooho ; Seo, Bumseok ; Yoon, Chan-Sic ; Kim, Kwangmin ; Moon, Ilyoung ; Lee, Hoin ; Lee, Kiseok ; Lee, Jun Ho ; Lee, Juik ; Park, Jemin</creator><creatorcontrib>Shin, Sooho ; Seo, Bumseok ; Yoon, Chan-Sic ; Kim, Kwangmin ; Moon, Ilyoung ; Lee, Hoin ; Lee, Kiseok ; Lee, Jun Ho ; Lee, Juik ; Park, Jemin</creatorcontrib><description>A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that penetrates at least a portion of the first sub-alignment key pattern, and a lower conductive pattern in the alignment key trench. The alignment key trench includes an upper trench that is provided in the capping dielectric pattern that has a first width, and a lower trench that extends downward from the upper trench and that has a second width less than the first width. The lower conductive pattern includes sidewall conductive patterns that are separately disposed on opposite sidewalls of the lower trench.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180717&DB=EPODOC&CC=US&NR=10026694B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180717&DB=EPODOC&CC=US&NR=10026694B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Shin, Sooho</creatorcontrib><creatorcontrib>Seo, Bumseok</creatorcontrib><creatorcontrib>Yoon, Chan-Sic</creatorcontrib><creatorcontrib>Kim, Kwangmin</creatorcontrib><creatorcontrib>Moon, Ilyoung</creatorcontrib><creatorcontrib>Lee, Hoin</creatorcontrib><creatorcontrib>Lee, Kiseok</creatorcontrib><creatorcontrib>Lee, Jun Ho</creatorcontrib><creatorcontrib>Lee, Juik</creatorcontrib><creatorcontrib>Park, Jemin</creatorcontrib><title>Semiconductor devices with alignment keys</title><description>A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that penetrates at least a portion of the first sub-alignment key pattern, and a lower conductive pattern in the alignment key trench. The alignment key trench includes an upper trench that is provided in the capping dielectric pattern that has a first width, and a lower trench that extends downward from the upper trench and that has a second width less than the first width. The lower conductive pattern includes sidewall conductive patterns that are separately disposed on opposite sidewalls of the lower trench.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAMTs3NTM7PSylNLskvUkhJLctMTi1WKM8syVBIzMlMz8tNzStRyE6tLOZhYE1LzClO5YXS3AyKbq4hzh66qQX58anFBYnJqXmpJfGhwYYGBkZmZpYmTkbGxKgBADC6KTU</recordid><startdate>20180717</startdate><enddate>20180717</enddate><creator>Shin, Sooho</creator><creator>Seo, Bumseok</creator><creator>Yoon, Chan-Sic</creator><creator>Kim, Kwangmin</creator><creator>Moon, Ilyoung</creator><creator>Lee, Hoin</creator><creator>Lee, Kiseok</creator><creator>Lee, Jun Ho</creator><creator>Lee, Juik</creator><creator>Park, Jemin</creator><scope>EVB</scope></search><sort><creationdate>20180717</creationdate><title>Semiconductor devices with alignment keys</title><author>Shin, Sooho ; Seo, Bumseok ; Yoon, Chan-Sic ; Kim, Kwangmin ; Moon, Ilyoung ; Lee, Hoin ; Lee, Kiseok ; Lee, Jun Ho ; Lee, Juik ; Park, Jemin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US10026694B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Shin, Sooho</creatorcontrib><creatorcontrib>Seo, Bumseok</creatorcontrib><creatorcontrib>Yoon, Chan-Sic</creatorcontrib><creatorcontrib>Kim, Kwangmin</creatorcontrib><creatorcontrib>Moon, Ilyoung</creatorcontrib><creatorcontrib>Lee, Hoin</creatorcontrib><creatorcontrib>Lee, Kiseok</creatorcontrib><creatorcontrib>Lee, Jun Ho</creatorcontrib><creatorcontrib>Lee, Juik</creatorcontrib><creatorcontrib>Park, Jemin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Shin, Sooho</au><au>Seo, Bumseok</au><au>Yoon, Chan-Sic</au><au>Kim, Kwangmin</au><au>Moon, Ilyoung</au><au>Lee, Hoin</au><au>Lee, Kiseok</au><au>Lee, Jun Ho</au><au>Lee, Juik</au><au>Park, Jemin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor devices with alignment keys</title><date>2018-07-17</date><risdate>2018</risdate><abstract>A semiconductor device includes an alignment key on a substrate. The alignment key includes a first sub-alignment key pattern with a first conductive pattern, a second conductive pattern, and a capping dielectric pattern that are sequentially stacked on the substrate, an alignment key trench that penetrates at least a portion of the first sub-alignment key pattern, and a lower conductive pattern in the alignment key trench. The alignment key trench includes an upper trench that is provided in the capping dielectric pattern that has a first width, and a lower trench that extends downward from the upper trench and that has a second width less than the first width. The lower conductive pattern includes sidewall conductive patterns that are separately disposed on opposite sidewalls of the lower trench.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Semiconductor devices with alignment keys |
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