Non-volatile resistive memory cells

Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where...

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Bibliographische Detailangaben
Hauptverfasser: Park, Jinwon, Williams, R. Stanley, Hyejung, Choi, Moon, Jiwon, Joo, Moonsig, Kim, Jeongtae, Sohn, Yongsun, Cho, Hans S, Lee, Changgoo, Nickel, Janice H, Roh, Jaesung
Format: Patent
Sprache:eng
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